IndiumV3, Main, Repository, bibRecord, 00B851

Effect of substrate temperature on electrical, structural, optical and cathodoluminescent properties of In2O3-Sn thin films prepared by spray pyrolysis

Identifieur interne : 00B851 ( Main/Repository ); précédent : 00B850; suivant : 00B852

Effect of substrate temperature on electrical, structural, optical and cathodoluminescent properties of In2O3-Sn thin films prepared by spray pyrolysis

Auteurs : RBID : Pascal:04-0531399

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Cathodoluminescence, Conductivité électrique, Dopage, Addition étain, Croissance cristalline en solution, Dépôt projection, Pyrolyse, Solution alcoolique, Diffraction RX, Microscopie électronique balayage, Orientation préférentielle, Effet concentration, Polycristal, Indium oxyde, Composé binaire, Couche mince, In2O3, In O, Substrat verre, 7860H, 8115R.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Alcoholic solution, Binary compounds, Cathodoluminescence, Crystal growth from solutions, Doping, Electrical conductivity, Experimental study, Indium oxides, Polycrystals, Preferred orientation, Pyrolysis, Quantity ratio, Scanning electron microscopy, Spray coatings, Thin films, Tin additions, XRD.

Abstract

Tin doped indium oxide thin films In₂O₃-Sn, have been deposited on glass substrate at various temperatures (723, 748 and 773K), using spray pyrolysis techniques. The optimal substrate temperature to obtain films of high crystallographic quality was 773K. For this temperature, the electrical resistivity is in the order of 3×10^-4 Ω cm and the average optical transmission in the visible region is larger than 95%. The films were polycrystalline, crystallize in a cubic structure of the bixbyite Mn₂O₃ (I) type, and are preferentially orientated along the (400) direction. The cathodoluminescence spectra of In₂O₃-Sn thin films taken at room temperature, present two emission peaks, the first one at 410 nm corresponding to indirect band gap emission and the second one at 650 nm is related to oxygen deficiencies acting as defects.

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Pascal:04-0531399

Le document en format XML

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O<sub>3</sub>
-Sn thin films prepared by spray pyrolysis</title>
<author><name sortKey="El Hichou, A" uniqKey="El Hichou A">A. El Hichou</name>
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<author><name sortKey="Kachouane, A" uniqKey="Kachouane A">A. Kachouane</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Université Ibn Tofail, Lab. d'optoélectronique et de physico-chimie des matériaux, Faculté des sciences, B. P. 133</s1>
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<author><name sortKey="Bubendorff, J L" uniqKey="Bubendorff J">J. L. Bubendorff</name>
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<author><name sortKey="Bougrine, A" uniqKey="Bougrine A">A. Bougrine</name>
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<term>Crystal growth from solutions</term>
<term>Doping</term>
<term>Electrical conductivity</term>
<term>Experimental study</term>
<term>Indium oxides</term>
<term>Polycrystals</term>
<term>Preferred orientation</term>
<term>Pyrolysis</term>
<term>Quantity ratio</term>
<term>Scanning electron microscopy</term>
<term>Spray coatings</term>
<term>Thin films</term>
<term>Tin additions</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Cathodoluminescence</term>
<term>Conductivité électrique</term>
<term>Dopage</term>
<term>Addition étain</term>
<term>Croissance cristalline en solution</term>
<term>Dépôt projection</term>
<term>Pyrolyse</term>
<term>Solution alcoolique</term>
<term>Diffraction RX</term>
<term>Microscopie électronique balayage</term>
<term>Orientation préférentielle</term>
<term>Effet concentration</term>
<term>Polycristal</term>
<term>Indium oxyde</term>
<term>Composé binaire</term>
<term>Couche mince</term>
<term>In2O3</term>
<term>In O</term>
<term>Substrat verre</term>
<term>7860H</term>
<term>8115R</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
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<front><div type="abstract" xml:lang="en">Tin doped indium oxide thin films In<sub>2</sub>
O<sub>3</sub>
-Sn, have been deposited on glass substrate at various temperatures (723, 748 and 773K), using spray pyrolysis techniques. The optimal substrate temperature to obtain films of high crystallographic quality was 773K. For this temperature, the electrical resistivity is in the order of 3×10<sup>-4</sup>
 Ω cm and the average optical transmission in the visible region is larger than 95%. The films were polycrystalline, crystallize in a cubic structure of the bixbyite Mn<sub>2</sub>
O<sub>3</sub>
 (I) type, and are preferentially orientated along the (400) direction. The cathodoluminescence spectra of In<sub>2</sub>
O<sub>3</sub>
-Sn thin films taken at room temperature, present two emission peaks, the first one at 410 nm corresponding to indirect band gap emission and the second one at 650 nm is related to oxygen deficiencies acting as defects.</div>
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O<sub>3</sub>
-Sn, have been deposited on glass substrate at various temperatures (723, 748 and 773K), using spray pyrolysis techniques. The optimal substrate temperature to obtain films of high crystallographic quality was 773K. For this temperature, the electrical resistivity is in the order of 3×10<sup>-4</sup>
 Ω cm and the average optical transmission in the visible region is larger than 95%. The films were polycrystalline, crystallize in a cubic structure of the bixbyite Mn<sub>2</sub>
O<sub>3</sub>
 (I) type, and are preferentially orientated along the (400) direction. The cathodoluminescence spectra of In<sub>2</sub>
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Effect of substrate temperature on electrical, structural, optical and cathodoluminescent properties of In2O3-Sn thin films prepared by spray pyrolysis

Effect of substrate temperature on electrical, structural, optical and cathodoluminescent properties of In2O3-Sn thin films prepared by spray pyrolysis

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